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HY27US16281A - (HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory

HY27US16281A_3792641.PDF Datasheet


 Full text search : (HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory


 Related Part Number
PART Description Maker
K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S28163 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
K4S280432C-TC_L1H K4S280432C K4S280432C-TC_L1L K4S 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D2632 128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
HYNIX[Hynix Semiconductor]
K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4 128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
K4D263238G-GC 128Mbit GDDR SDRAM
Samsung Electronic
K4R271669E 128Mbit RDRAM(E-die)
SAMSUNG SEMICONDUCTOR CO. LTD.
V55C2128164VB V55C2128164VT V55C2128164V 128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
V55C2128164V 128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
Mosel Vitelic, Corp.
K4S280832D-TC_L1H K4S280832D-TC_L1L K4S280832D-TC_ RES, 0603, TF, 16.5R, 1%, 1/10W
128Mbit SDRAM (4M x 8Bit x 4 Banks Synchronous DRAM)
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
 
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